PRODUCT FEATURE |
Cut-off wavelength up to 180 nm Maximum FOHG and FIHG conversion efficiencies of Nd doped laser Relatively large effective NLO coefficient (about two times that of KDP) Wide acceptance angle and small walk-off angle No saturation for high-power generation Short grow cycle and large size |
SPECIFICATIONS | |
Dimension Tolerance | (W±0.1mm)×(H±0.1mm)×(L+0.5/-0.1mm) (L≥2.5 mm) (W±0.1mm)×(H±0.1mm)×(L+0.1/-0.1mm) (L<2.5 mm) |
Clear Aperture | Central 90% of the diameter |
Surface Quality (Scratch/Dig) | 10/5 to MIL-PRF-13830B |
Flatness | ≦ λ/6 @633 nm |
Parallelism | 20 arc sec |
Perpendicularity | ≦ 15 arc min |
Angle Tolerance | Δθ≦0.25 °, ΔФ≦0.25 ° |
Chamfer | ≦ 0.2 mm × 45 ° |
Chip | ≦ 0.1 mm |
Damage Threshold | >300 MW/cm2 @532 nm, 10 ns, 10 Hz (AR-Coated); >150 MW/cm2 @266 nm, 10 ns, 10 Hz (AR-Coated); |
Quality Warranty Period | One year under proper use. |
CHEMICAL AND STRUCTURAL PROPERTIES | |
Crystal Structure | Tetragonal, Space group Ⅰ |
Lattice Parameter | a=b=10.494 Å,c=8.939 Å |
Symmetry | Z=4 |
Melting Point | About 844.5 ℃ |
OPTICAL AND NONLINEAR OPTICAL PROPERTIES | |
Transparency Range | 180~2750 nm |
Angle Acceptance | 1.02 mrad·cm at 1064 nm, 0.49 mrad·cm at 532 nm,0.84 mrad·cm at 488 nm. |
Temperature Acceptance | 9.4℃·cm |
Spectral Acceptance | 7.03 nm·cm at 1064 nm, 0.13 nm·cm at 532 nm, 0.09 nm·cm at 488 nm |
Walk-off Angle | 1.78 °at 1064 nm, 1.83 °at 532 nm, 0.98 °at 488 nm |
Effective NLO Coefficients | 1.01 pm/V at 532 nm, 1.16 pm/V at 488 nm, 0.95 pm/V at 1064 nm |
NLO Coefficients | deff (Ⅰ) = d36 sinθm sin(2 Ф) deff (Ⅱ) = d36 sin(2 θm) sin(2 Ф) |
Sellmeier Equations (λ in μm) | CLBO at 20 ℃ no2 = 2.2104 + 0.01018 / (λ2 - 0.01424) - 0.01258 λ2 ne2 = 2.0588 + 0.00838 / (λ2 - 0.01363) - 0.00607 λ2 (0.1914 µm<λ<2.09 µm) |